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features ? frequency range 2.4 ghz to 2.5 ghz supply voltage 2.7v to 3.6v 32 db power gain 23 dbm linear output power fo r ieee 802.11b mode operation evm < 2.0% at 19 dbm output po wer for ieee 802.11g mode operation on-chip power detector with 20 db dynamic range power-down mode and biasing control input and interstage ma tching fully on-chip low profile lead-free plastic package qfn16 (3 mm 3 mm 0.9 mm) applications ieee 802.11b dsss wlan ieee 802.11g ofdm wlan bluetooth 2.0 enhanced data rate pc cards, pcmcia, access points 2.4 ghz ism band application 1. description this power amplifier (pa) is designed for high-performance 802.11b and 802.11g multi-mode applications such as mini pci and pcmcia for portable devices and access points. the low profile plastic package with internal input matching to 50 ? and on-chip interstage matching minimizes the pcb board-space and allows simplified integration with very few passive components. the on-chip power detector provides a voltage linear to the output power, while the standby/bias control logic provides power-saving and shutdown options. the pa is realized as a three stage pa with internal interstage matching and an open-collector output structure. the power amplifier is designed using atmel ? ?s silicon-germanium (sige2) process and provides excellent linearity and noise performance, high gain, and good power-added efficiency. high gain power amplifier for 802.11b/g wlan systems atr7032 4846d?wlan?10/07
2 4846d?wlan?10/07 atr7032 figure 1-1. block diagram rf_in ic gnd_rf v_pa1 15 14 13 10 9 16 8 50 ? input matching voltage detector standby/ bias circuitry 11 rf_out rf_out rf_out rf_out 12 5 6 7 interstage matching 1 2 3 4 paddle gnd_rf ic v_pa2 nc nc atr7032 vctrl vcc gnd_vcc vdet interstage matching
3 4846d?wlan?10/07 atr7032 2. pin configuration figure 2-1. pinning qfn16 ic v_pa2 nc nc ic rf_in gnd v_pa1 rf_out rf_out rf_out rf_out 16 15 14 13 5 6 7 8 1 2 3 4 12 11 10 9 atr7032 vctrl vcc gnd_vcc vdet gnd on the paddle table 2-1. pin description pin symbol function 1 vctrl power-up/biasing control voltage 2 vcc supply voltage 3 gnd_vcc ground 4 vdet power detector voltage 5 rf_out rf output 6 rf_out rf output 7 rf_out rf output 8 rf_out rf output 9 nc not connected 10 nc not connected 11 v_pa2 supply voltage pa stage 2 12 ic internally connected, on-chip matc hing; must not be externally connected 13 v_pa1 supply voltage pa stage 1 14 gnd ground 15 rf_in rf input 16 ic internally connected, on-chip matc hing; must not be externally connected paddle gnd ground on the paddle
4 4846d?wlan?10/07 atr7032 3. absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions beyond t hose indicated in the operational sections of this specification is not implied. exposure to absolute maximum rati ng conditions for extended periods may affect device reliability . parameters test conditions symbol value unit supply voltage without rf v cc 5v supply current i cc 600 ma junction temperature t j 150 c storage temperature t stg ?40 to +125 c input rf power p in 12 dbm control voltage power up/down and biasing v vctrl 0 to +3.0 v esd protection, all pins eia/jesd22-a114-b v esd 500 v note: 1. the part may not survive all maximums applied simultaneously. 4. operating range parameters symbol value unit supply voltage range v cc 2.7 to 3.6 v ambient temperature range t amb ?40 to +85 c frequency range f 2400 to 2500 mhz 5. electrical characteristics test conditions measured on atmel?s eval uation board (unless otherwise stated): v cc = 3.3v, frequency = 2.45 ghz, t amb = 25c no. parameters test conditions pin symbol min. typ. max. unit type* 1.0 control voltage range pa operating mode v vctrl 12va 1.1 power down mode v vctrl 0.2 a 1.2 current consumption quiescent i cc_q 90 ma a 1.3 power down mode i cc_pd 10 a a 1.4 pa operating mode i vctrl 100 a a *) type means: a = 100% tested, b = 100% correlation test ed, c = characterized on samples, d = design parameter
5 4846d?wlan?10/07 atr7032 6. electrical characteristics ? unmodulated carrier test conditions measured on atmel?s eval uation board (unless otherwise stated): v cc = 3.3v, frequency = 2.45 ghz, t amb = 25c no. parameters test conditions pi n symbol min. typ. max. unit type* 2.0 saturated output power for reference p sat 28.5 dbm c 2.1 p1db output power p1db 27 dbm a 2.2 harmonic rejection p out = 23 dbm 2fout 3fout ?45 ?30 dbc dbc c c 2.3 small signal gain i cc_q , small signal condition gl 32 db a 2.4 gain variation 2.4 to 2.5 ghz, i cc_q , small signal condition ?40 to +85c, i cc_q , small signal condition g varfreq g vartemp 1.5 1.5 db db c c 2.5 reverse isolation i cc_q , small signal condition isor 40 db c 2.6 input 50 ? vswr i cc_q , small signal condition vswr in 2:1 c 2.7 output 50 ? vswr i cc_q , small signal condition, with external matching vswr out 2:1 c *) type means: a = 100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter 7. electrical characteristic s ? 11 mbps cck modulation test conditions measured on atmel?s eval uation board (unless otherwise stated): v cc = 3.3v, frequency = 2.45 ghz, t amb = 25c, 11 mbps cck modulation wi th gaussian transmit filtering of bt = 0.4, confor ming to ieee 802.11b no. parameters test conditions pin symbol min. typ. max. unit type* 3.0 maximum linear output power acpr1 33 dbc, acpr2 55 dbc p lin 23 dbm c 3.1 linear power gain p out = 23 dbm gl 32 db a 3.2 current consumption p out = 23 dbm i cc 220 ma a *) type means: a = 100% tested, b = 100% correlation test ed, c = characterized on samples, d = design parameter 8. electrical characteristics ? 54 mbps ofdm modulation test conditions measured on atmel?s eval uation board (unless otherwise stated): v cc = 3.3v, frequency = 2.45 ghz, t amb = 25c, 54 mbps ofdm modulation, conforming to ieee 802.11g; 0.7% evm measurement equipment noise floor is included in the evm measurement result. no. parameters test conditions pin symbol min. typ. max. unit type* 4.0 error vector magnitude p out = 19 dbm evm 2.0 % c 4.1 linear power gain p out = 19 dbm gl 32 db a 4.2 current consumption p out = 19 dbm i cc 150 ma a *) type means: a = 100% tested, b = 100% correlation test ed, c = characterized on samples, d = design parameter
6 4846d?wlan?10/07 atr7032 10. application circuit figure 10-1. application board schematic 9. power detector test conditions measured on atmel?s eval uation board (unless otherwise stated): v cc = 3.3v, frequency = 2.45 ghz, t amb = 25c no. parameters test conditions pin symbol min. typ. max. unit type* 5.0 detector voltage range p out = 5 to 25 dbm v det 02va 5.1 settling time p out = 5 to 25 dbm t set 0.5 s c 5.2 detector accuracy p out = 5 to 25 dbm v cc = 2.7 to 3.6v t amb = ?40 to +85c ? p out 0.7 db c *) type means: a = 100% tested, b = 100% correlation test ed, c = characterized on samples, d = design parameter c10 (1) vctrl c9 (1) c5 t2 c7 l3 v_pa3 vdet pa_out v_pa1 c1 rf_in c2 vcc l1 c3 t1 ic gnd_rf 15 14 13 10 9 16 atr7032 nc 8 nc 50 ? input matching voltage detector standby/ bias circuitry ic 11 12 5 6 7 interstage matching 1 2 3 4 paddle gnd_rf v_pa2 c8 r1 (1) c12 (1) c11 (1) l2 c19 c18 (1) c17 (1) c16 (1) c4 t1, t2: microstrip line microstrip line length/mm width/mm t1 4.3 0.64 t2 5.6 0.64 metal layer distance to ground: 360 m cu metal layer thickness: 35 m r of dielectric material (fr4): 4.5 (1) components can be omitted depending on application ic: internally connected; pin must not be connected to any any other pin or supply chain interstage matching
7 4846d?wlan?10/07 atr7032 figure 10-2. application board layout table 10-1. bill of materials for application board component reference value size capacitor c 1 4p7 0603 capacitor c 2 56p 0603 capacitor c 3 56p 0603 capacitor c 4 56p 0603 capacitor c 5 1p8 0603 capacitor c 7 4p7 0603 capacitor c 8 4p7 0603 capacitor c 9 4p7 0603 capacitor c 10 (1) 10n 0603 capacitor c 11 (1) 10n 0603 capacitor c 12 (1) 10n 0603 capacitor c 16 (1) 1 0603 capacitor c 17 (1) 1 0603 capacitor c 18 (1) 1 0603 capacitor c 19 (1) 1 0603 resistor r 1 22k 0603 inductor l 1 15n 0603 inductor l 2 15n 0603 inductor l 3 15n 0603 note: 1. components can be omitted depending on application
8 4846d?wlan?10/07 atr7032 10.1 evaluation board set-up instructions after connection of all cables (rf and dc): v cc , v v_pa1 , v v_pa2 , v rf_out = 3.3v increase vctrl until 90 ma quiescent current without rf signal is reached (~ 1.05v) increase input power until desired linear output power is reached 11. typical operating characteristics figure 11-1. typical gain and current versus control voltage: frequency = 2450 mhz; p in = ?40 dbm; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v figure 11-2. typical operating point for 54 mbps ofdm modulation: frequency = 2450 mhz; p out = 19 dbm; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v -30 -20 -10 0 10 20 30 40 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v ctrl (v) 0 50 100 150 200 250 300 350 i (ma) gain gain (db) i tot i v_pa3 i v_pa2 i v_pa1 + i vcc 0 0.5 1 1.5 2 2.5 3 3.5 0.9 0.95 1 1.05 1.1 1.15 1.2 evm (%) 110 120 130 140 150 160 170 180 i (ma) evm operating point i tot v ctrl (v)
9 4846d?wlan?10/07 atr7032 figure 11-3. typical s-parameter at operating point: v vctrl = 1.05v; i cc_q = 90 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v figure 11-4. typical s-parameter at operating point (detail): v vctrl = 1.05v; i cc_q = 90 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v figure 11-5. typical power-sweep wit h unmodulated carrier at operating point: frequency = 2450 mhz; v vctrl = 1.05v; i cc_q = 90 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v -40 -30 -20 -10 0 10 20 30 40 0.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 f (ghz) s21 (db) -70 -60 -50 -40 -30 -20 -10 0 10 s12, s11 and s22 ( db ) s 12 s 21 s 11 s 22 0.5 -40 -30 -20 -10 0 10 20 30 40 2.40 2.43 2.45 2.48 2.50 f (ghz) s21 (db) -70 -60 -50 -40 -30 -20 -10 0 10 s12, s11 and s22 (db) s 21 s 11 s 22 s 12 0 5 10 15 20 25 30 35 40 45 50 3 5 7 9 1113151719 2123252729 p out (dbm) gain (db) and pae (%) 0 50 100 150 200 250 300 350 400 450 500 i (ma) pae gain i tot i v_pa3 i v_pa2 i v_pa1 + i vcc
10 4846d?wlan?10/07 atr7032 figure 11-6. typical power-sweep with unmodulated carrier at operating point (temperature behavior): frequency = 2450 mhz; v vctrl = 1.05v; i cc_q = 90 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v figure 11-7. typical spectral plot conforming compliance to 802.11b spectral mask for 11 mbps cck modulation at operating point: p out = 23 dbm; frequency = 2450 mhz; v vctrl = 1.05v; i cc = 220 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v 20 22 24 26 28 30 32 34 36 38 40 3 5 7 9 11 13 15 17 19 21 23 25 27 29 p out (dbm) gain (db) and pae (%) 50 100 150 200 250 300 350 400 450 500 550 i (ma) gain (+85?c) gain (+25?c) gain (-40?c) i tot (+85?c) i tot (+25?c) i tot (-40?c) span 100 mhz 10 mhz/ center 2.45 ghz -70 a trg lvl ext 55 dbc 33 dbc line acprbu_g marg limit check marg 22.79 dbm ch pwr * rbw 100 khz * vbw 100 khz * swt 20 ms * at t 0 db ref 21.1 dbm 1 rm * avg offset 20.8 db 20 10 0 -10 -20 -30 -40 -50 -60
11 4846d?wlan?10/07 atr7032 figure 11-8. typical power-sweep with 54 mbps ofdm modulati on at operating point: frequency = 2450 mhz; v vctrl = 1.05v; i cc_q = 90 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v figure 11-9. typical spectral plot conforming compliance to 802.11g spectral mask for 54 mbps ofdm modulation at operating point: p out = 19 dbm; frequency = 2450 mhz; v vctrl = 1.05v; i cc = 150 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 15 16 17 18 19 20 21 p out (dbm) evm (%) 100 110 120 130 140 150 160 170 180 i ( ma ) evm i tot * rbw 100 khz * vbw 100 khz * swt 20 ms * at t 5 db ref 13.1 dbm offset 20.8 db 10 1 rm * avg 0 -10 -20 -30 -40 -50 -60 -70 -80 18.98 dbm ch pwr a trg lvl ext gat span 100 mhz 10 mhz/ center 2.45 ghz
12 4846d?wlan?10/07 atr7032 figure 11-10. typical detector voltage versus p out for unmodulated carrier (temperature and vcc parameterized): frequency = 2450 mhz; v vctrl = 1.05v; i cc_q = 90 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 2.7v, 3.3v, 3.6v; t amb = ?40c, 25c, 85c figure 11-11. power detector response (rising edge): p out = 23 dbm; frequency = 2450 mhz; v vctrl = 1.05v; i cc_q = 90 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -5 -1 3 7 11 15 19 23 27 p out (dbm) voltage (v) v det
13 4846d?wlan?10/07 atr7032 figure 11-12. power detector response (falling edge): p out = 23 dbm; frequency = 2450 mhz; v vctrl = 1.05v; i cc_q = 90 ma; v v_pa1 = v v_pa2 = v rf_out = v cc = 3.3v
14 4846d?wlan?10/07 atr7032 13. package information 14. revision history 12. ordering information extended type number package remarks moq atr7032-pvpw qfn16, 3 3 taped and 80 mm reeled, rohs compliant 2000 pcs. ATR7032-PVQW qfn16, 3 3 taped and 330 mm reeled, rohs compliant 8000 pcs. atr7032-dev-board ? evaluation board 1 1 4 16 0.25 3 1.7 16 13 12 1 5 8 0.4 0.1 0.9 0.1 0.05 0.5 nom. 1.5 +0 -0.05 2.68 0.15 specifications according to din technical drawings not indicated tolerances 0.05 dimensions in mm package: qfn 16 - 3x3 exposed pad 1.7x1.7 (acc. jedec outline no. mo-220) drawing-no.: 6.543-5115.01-4 issue: 1; 07.03.05 assembly chip pac 94 please note that the following page numbers referred to in this section refer to the specific revision mentioned, not to this document. revision no. history 4846d-wlan-10/07 ? put datasheet in a new template ? section 12 ?ordering information? on page 14 changed
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